US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 20 for "Three-dimensional memory device, having bridge structure, and methods for forming the same" (Chinese Inventors)

Posted On: 2026-10-21

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,446, issued on Oct. 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory device, having bridg... Read More

US Patent Issued to Intel on Oct. 20 for "Logic circuits using vertical transistors with backside source or drain regions" (Oregon, California Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,447, issued on Oct. 20, was assigned to Intel Corp. (Santa Clara, Calif.). "Logic circuits using vertical transistors with backside source ... Read More

US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same" (Japanese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,448, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stairless three-dimensional memory device containing... Read More

US Patent Issued to Micron Technology on Oct. 20 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,449, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory arrays comprising strings of memory cells and method... Read More

US Patent Issued to SK hynix on Oct. 20 for "Semiconductor device including through electrode" (South Korean Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,450, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device including through electrode" was inve... Read More

US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings" (Japanese, American Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,451, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stairless three-dimensional memory device and method... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 20 for "Semiconductor device and an electronic system including the same" (South Korean Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,452, issued on Oct. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and an electronic syste... Read More

US Patent Issued to International Business Machines on Oct. 20 for "Logic and memory device with common vertical channel" (New York Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,453, issued on Oct. 20, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Logic and memory device with common vertical... Read More

US Patent Issued to Kepler Computing on Oct. 20 for "Capacitor integrated with a transistor for logic and memory applications" (American, Belgian Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,454, issued on Oct. 20, was assigned to Kepler Computing Inc. (San Francisco). "Capacitor integrated with a transistor for logic and memory... Read More

US Patent Issued to WUXI SMART MEMORIES TECHNOLOGIES on Oct. 20 for "Ferroelectric memory device and method for forming the same" (Chinese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,455, issued on Oct. 20, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China). "Ferroelectric memory device and method fo... Read More

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US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 20 for "Three-dimensional memory device, having bridge structure, and methods for forming the same" (Chinese Inventors)

US Patent Issued to Intel on Oct. 20 for "Logic circuits using vertical transistors with backside source or drain regions" (Oregon, California Inventors)

US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same" (Japanese Inventors)

US Patent Issued to Micron Technology on Oct. 20 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

US Patent Issued to SK hynix on Oct. 20 for "Semiconductor device including through electrode" (South Korean Inventor)

US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings" (Japanese, American Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Oct. 20 for "Semiconductor device and an electronic system including the same" (South Korean Inventors)

US Patent Issued to International Business Machines on Oct. 20 for "Logic and memory device with common vertical channel" (New York Inventors)

US Patent Issued to Kepler Computing on Oct. 20 for "Capacitor integrated with a transistor for logic and memory applications" (American, Belgian Inventors)

US Patent Issued to WUXI SMART MEMORIES TECHNOLOGIES on Oct. 20 for "Ferroelectric memory device and method for forming the same" (Chinese Inventors)