US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 20 for "Three-dimensional memory device, having bridge structure, and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,446, issued on Oct. 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device, having bridge structure, and methods for forming the same" was invented by Jingtao Xie (Wuhan, China), Bingjie Yan (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D includes a memory array structure. The memory array structure includes a first memory array structure and a second memory array structure each having a plurality of conductive/dielectric layer pairs. The memory array structure also includes a staircase structu...