US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,448, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same" was invented by Tomohiro Kubo (Yokkaichi, Japan) and Takayuki Maekura (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming an in-process alternating stack of insulating layers and sacrificial material layers, forming a meandering dielectric isolation structure through the in-process alternating stack, forming memory stack structures through the alternating stack, where each of the memory stack structu...