US Patent Issued to Sandisk Technologies on Oct. 20 for "Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings" (Japanese, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,451, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings" was invented by Naohiro Hosoda (Yokkaichi, Japan), Kazuki Isozumi (Yokkaichi, Japan), Takayuki Maekura (Yokkaichi, Japan), Hiroyuki Ogawa (Nagoya, Japan) and Koichi Matsuno (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fil...