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US Patent Issued to Honeywell International on Aug. 4 for "Bonding layer between stacked integrated circuits" (Minnesota, Florida Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,773, issued on Aug. 4, was assigned to Honeywell International Inc. (Charlotte, N.C.). "Bonding layer between stacked integrated circuits" w... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Method of forming semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,774, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of forming semiconductor d... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Fin loss prevention" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,775, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Fin loss prevention" was invented by ... Read More


US Patent Issued to CAMBRIDGE GAN DEVICES on Aug. 4 for "Power semiconductor device comprising a wide bandgap substrate" (British Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,776, issued on Aug. 4, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Power semiconductor device comprising a wide ... Read More


US Patent Issued to Infineon Technologies on Aug. 4 for "Semiconductor device with Schottky contact" (Austrian, German Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,777, issued on Aug. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device with Schottky contact" was inven... Read More


US Patent Issued to ROHM on Aug. 4 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,778, issued on Aug. 4, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Shinya Umeki (Kyoto, Japan). Ac... Read More


US Patent Issued to AIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Epitaxial source/drain structures for multigate devices and methods of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,779, issued on Aug. 4, was assigned to AIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Epitaxial source/drain structures ... Read More


US Patent Issued to Intel on Aug. 4 for "Wall that includes a gas between metal gates of a semiconductor device" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,780, issued on Aug. 4, was assigned to Intel Corp. (Santa Clara, Calif.). "Wall that includes a gas between metal gates of a semiconductor d... Read More


US Patent Issued to TAIWAN SEMCONDUCTOR MANUFACTURING on Aug. 4 for "Integrated circuit with a gate structure and method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,781, issued on Aug. 4, was assigned to TAIWAN SEMCONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Integrated circuit with a gate structu... Read More


US Patent Issued to Intel on Aug. 4 for "Integrated circuit structure with front side signal lines and backside power delivery" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,782, issued on Aug. 4, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structure with front side signal lines and bac... Read More