US Patent Issued to AIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Epitaxial source/drain structures for multigate devices and methods of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,779, issued on Aug. 4, was assigned to AIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial source/drain structures for multigate devices and methods of fabricating thereof" was invented by Shahaji B More (Hsinchu City, Taiwan) and Cheng-Han Lee (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary source/drain structure extends from a topmost channel...