ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,775, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin loss prevention" was invented by Hung-Ju Chou (Taipei, Taiwan), Chih-Chung Chang (Nantou County, Taiwan), Jiun-Ming Kuo (Taipei, Taiwan), Che-Yuan Hsu (Hsinchu, Taiwan), Pei-Ling Kao (Hsinchu, Taiwan) and Chen-Hsuan Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the sem...