US Patent Issued to CAMBRIDGE GAN DEVICES on Aug. 4 for "Power semiconductor device comprising a wide bandgap substrate" (British Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,776, issued on Aug. 4, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Power semiconductor device comprising a wide bandgap substrate" was invented by Florin Udrea (Cambridgeshire, Great Britain) and Loizos Efthymiou (Cambridgeshire, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power device comprising a substrate, a first wide bandgap semiconductor material positioned over the substrate, wherein the substrate comprises a second wide bandgap semiconductor material different from the first bandgap semiconductor material, a high voltage transistor formed in the first wide bandgap semiconductor material, and a hi...