ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,774, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming semiconductor device" was invented by Shao-Tse Huang (Hsinchu City, Taiwan), Jin-Hao Jhang (Hsinchu County, Taiwan), Wei-De Ho (Hsinchu City, Taiwan) and Han-Yu Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes a number of operations. A bottom transistor and a top transistor overlapping the bottom transistor are formed. A vertical local interconnect (VLI) structure is formed and electrically connects source/drain regions of the bottom transistor and the top transistor. A hard mask laye...