Exclusive

Publication

Byline

Location

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor package" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,721, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor package" was invented by Sang-Si... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,722, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method for f... Read More


US Patent Issued to International Business Machines on Aug. 4 for "Metal spacer 3D-MIM capacitor" (Utah, New York Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,723, issued on Aug. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Metal spacer 3D-MIM capacitor" was invented by... Read More


US Patent Issued to Intel on Aug. 4 for "Microelectronic assemblies with inductors in direct bonding regions" (Arizona, Oregon, California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,724, issued on Aug. 4, was assigned to Intel Corp. (Santa Clara, Calif.). "Microelectronic assemblies with inductors in direct bonding regio... Read More


US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Semiconductor device, manufacturing method thereof, and 3D NAND memory" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,725, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor device, manufacturing method ther... Read More


US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Aug. 4 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,726, issued on Aug. 4, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and m... Read More


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Aug. 4 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,727, issued on Aug. 4, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Semiconductor structure and method for... Read More


US Patent Issued to United Microelectronics on Aug. 4 for "Semiconductor structure including Schottky barrier diode and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,728, issued on Aug. 4, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Semiconductor structure including Schottky barrier ... Read More


US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Semiconductor device having reduced risk of dielectric breakdown" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,729, issued on Aug. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device having reduced risk of dielectric bre... Read More


US Patent Issued to ROHM on Aug. 4 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,730, issued on Aug. 4, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Kohei Murasaki (Kyoto, Japan). ... Read More