ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,730, issued on Aug. 4, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Kohei Murasaki (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "This semiconductor device includes: an n-type drift layer; a p-type base region; a trench extending in the depth direction so as to pass through the base region and reach the drift layer; an insulating film formed on an inner surface of the trench; a gate trench surrounding the insulating film; and a p-type column region provided on the drift layer at a position at the bottom of the trench. The drift layer includes: a first region having a first concentration peak; and ...