ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,722, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shin-Hung Tsai (Hsinchu, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Te-Yang Lai (Hsinchu, Taiwan), Da-Yuan Lee (Jhubei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a capacitor, which includes forming a first capacitor electrode, forming a first capacitor insulator over the first capacitor electrode, and forming a second capacitor electrode over and contacting the first capacitor insulator. The formation of t...