US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Aug. 4 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,726, issued on Aug. 4, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Semiconductor structure and method for forming same" was invented by Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming same are provided. The forming method includes: forming a second electrode layer on a first dielectric layer, where the second electrode layer covers the first dielectric layer in a first region; forming a second dielectric layer on a second electrode layer and in a second region; forming a third electrode layer on the second dielectric layer, where on a pr...