US Patent Issued to United Microelectronics on Aug. 4 for "Semiconductor structure including Schottky barrier diode and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,728, issued on Aug. 4, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor structure including Schottky barrier diode and manufacturing method thereof" was invented by Wen-Kai Lin (Tainan City, Taiwan), Sheng-Yuan Hsueh (Tainan City, Taiwan), Kuo-Hsing Lee (Hsinchu County, Taiwan) and Chih-Kai Kang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate including a fin portion, first and second doped regions having a first conductive type, first and second contacts, and first and second me...