ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,683, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and man... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,684, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Through-substrate via and method fo... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,685, issued on Aug. 11, was assigned to RAYTHEON TECHNOLOGIES Corp. (Arlington, Va.). "Segmented transistor active region for enhanced ther... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,686, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and man... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,688, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure with ro... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,689, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Antimony-gallium-zinc-oxide materials" was invented by Adha... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,690, issued on Aug. 11, was assigned to ATOMERA Inc. (Los Gatos, Calif.). "Gate-all-around (GAA) device including a superlattice" was inven... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,691, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.). "Contacts with interface fermi level tuning layers" was invented... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,692, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Contacts for semiconductor devices ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,694, issued on Aug. 11, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Integrated circuit with silicide formation blocking" was invented... Read More