ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,690, issued on Aug. 11, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Gate-all-around (GAA) device including a superlattice" was invented by Keith Doran Weeks (Chandler, Ariz.), Nyles Wynn Cody (Tempe, Ariz.), Marek Hytha (Brookline, Mass.), Robert J. Mears (Wellesley, Mass.), Robert John Stephenson (Duxford, Great Britain) and Hideki Takeuchi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor gate-all-around (GAA) device may include a semiconductor substrate, source and drain regions on the semiconductor substrate, a plurality of semiconductor nanostructures extending between the source and drain regions, and a ga...