US Patent Issued to Micron Technology on Aug. 11 for "Antimony-gallium-zinc-oxide materials" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,689, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Antimony-gallium-zinc-oxide materials" was invented by Adharsh Rajagopal (Boise, Idaho), Scott E. Sills (Boise, Idaho), Sumeet C. Pandey (Meridian, Idaho) and David M. Guzman (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for transistors having a first source/drain region, a second source/drain region, and a channel region, wherein the channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material."

The patent was filed on April 4, 2022, under Application No. 17/712,294.

*For further information, inclu...