ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,692, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Contacts for semiconductor devices and methods of forming the same" was invented by Te-Chih Hsiung (Taipei City, Taiwan), Jyun-De Wu (New Taipei City, Taiwan), Yi-Chen Wang (Zhubei City, Taiwan), Yi-Chun Chang (Hsinchu, Taiwan) and Yuan-Tien Tu (Puzih City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first c...