US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor structure with roughened sidewall and method of manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,688, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with roughened sidewall and method of manufacturing thereof" was invented by Jen-Yuan Chang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a die structure including: a substrate having a sidewall; a dielectric disposed over the substrate; an interconnect structure disposed within the dielectric; and a capping member surrounding the die structure, wherein the sidewall of the substrate includes a plurality of recesses extending into the substrate, and each of the pl...