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US Patent Issued to SK hynix on Aug. 11 for "Semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,639, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device" was invented by Nam Jae Lee (... Read More


US Patent Issued to KIOXIA on Aug. 11 for "Semiconductor memory device and method for manufacturing semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,640, issued on Aug. 11, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device and method for manufacturing semiconductor memor... Read More


US Patent Issued to Micron Technology on Aug. 11 for "Page buffer for memory devices" (Singaporean, American, Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,641, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Page buffer for memory devices" was invented by Md Zahid Ho... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Semiconductor memory devices and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,642, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor memory devices and me... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Three dimensional semiconductor device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,643, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Three dimensional semiconductor device an... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Three-dimensional memory device with ferroelectric material" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,644, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Three-dimensional memory device wit... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "3D ferroelectric memory devices" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,645, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "3D ferroelectric memory devices" was invente... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Memory device and electronic device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,646, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Memory device and electronic device inclu... Read More


US Patent Issued to Micron Technology on Aug. 11 for "Array of capacitors, an array of memory cells, method used in forming an array of memory cells, and method used in forming an array of capacitors" (Italian Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,647, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Array of capacitors, an array of memory cells, method used ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Bit-line resistance reduction" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,648, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Bit-line resistance reduction" was ... Read More