US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Semiconductor memory devices and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,642, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices and methods of fabricating the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Sai-Hooi Yeong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a word line (WL) structure. The semiconductor device includes a ferroelectric layer over the WL structure. The semiconductor device includes a channel layer over the ferroelectric layer. The semiconductor device includes a source line (SL) structure over the channel layer. The semiconductor ...