ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,645, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"3D ferroelectric memory devices" was invented by Bongyong Lee (Suwon-si, South Korea) and Yongseok Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D FeRAM device includes a capacitor structure including a first capacitor electrode on a substrate, the first capacitor electrode extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a ferroelectric pattern surrounding a sidewall of the first capacitor electrode, and second capacitor electrodes surrounding and contacting an outer sidewal...