ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,643, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three dimensional semiconductor device and method of manufacturing the same" was invented by Jeon Il Lee (Suwon-si, South Korea) and Kyunghwan Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes first through structures on a substrate, the first through structures arranged in a first direction, an electrode adjacent to the first through structures and extending horizontally in the first direction along the first through structures, and a ferroelectric layer interposed between the electrode and...