US Patent Issued to Micron Technology on Aug. 11 for "Page buffer for memory devices" (Singaporean, American, Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,641, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Page buffer for memory devices" was invented by Md Zahid Hossain (Boise, Idaho), Martin Popp (Meridian, Idaho), Xiaosong Zhang (Boise, Idaho), Surendranath C. Eruvuru (Boise, Idaho), Suvra Sarkar (Singapore) and Tianqi Xu (JiaDing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include apparatus having a memory device structured with a circuit under array (CuA) architecture. A page buffer region in the CuA can be formed with a periphery region that is horizontally adjacent to the page buffer region. Contacts to gates for transistors in...