US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-09-08

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,212, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Thin film transistor including a co... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" (South Korean Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,213, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Field effect transistor with multi-layer met... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Surface-doped channels for threshold voltage modulation" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,214, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Surface-doped channels for threshol... Read More

US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" (Japanese Inventor)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,215, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device comprising a first electrode, a second ele... Read More

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,216, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Manufacturing method of forming a buffer region of semic... Read More

US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,217, issued on Sept. 8, was assigned to Wolfspeed Inc. (Durham, N.C.). "Gate trench power semiconductor devices having deep support shields... Read More

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery" (Japanese Inventor)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,218, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device with a first parallel pn structure ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,219, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea). "Semiconductor device including backside isolation stru... Read More

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,220, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet transistor device with bottom isol... Read More

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,221, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with backside self-aligned conduc... Read More

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US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" (South Korean Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Surface-doped channels for threshold voltage modulation" (Taiwanese Inventors)

US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" (Japanese Inventor)

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

US Patent Issued to Intel on Sept. 8 for "Integrated circuit structures with backside self-aligned conductive source or drain contact" (Oregon Inventors)