US Patent Issued to Yangtze Memory Technologies on May 19 for "Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3D memories and memory devices" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,172, issued on May 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor devices including a plurality of ... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TSING HUA UNIVERSITY on May 19 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,173, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (H... और पढ़ें

US Patent Issued to UNITED MICROELECTRONICS on May 19 for "Semiconductor device and fabricating method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,174, issued on May 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and fabricating method t... और पढ़ें

US Patent Issued to Infineon Technologies Austria on May 19 for "Power semiconductor device and methods of producing a power semiconductor device" (Malaysian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,175, issued on May 19, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Power semiconductor device and methods of produ... और पढ़ें

US Patent Issued to Siliconix on May 19 for "Termination structure" (California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,176, issued on May 19, was assigned to Siliconix Inc. (San Jose, Calif.). "Termination structure" was invented by Ayman Shibib (San Jose, Ca... और पढ़ें

US Patent Issued to FUJI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,177, issued on May 19, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Mana... और पढ़ें

US Patent Issued to FUJI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,178, issued on May 19, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Tomo... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor structure with front side source drain contact and oppositely positioned source drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,179, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure with fron... और पढ़ें

US Patent Issued to Intel on May 19 for "Source or drain structures with phosphorous and arsenic dopants" (Oregon Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,180, issued on May 19, was assigned to Intel Corp. (Santa Clara, Calif.). "Source or drain structures with phosphorous and arsenic dopants" ... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Field effect transistor with multiple hybrid fin structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,181, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with multiple... और पढ़ें

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