US Patent Issued to Siliconix on May 19 for "Termination structure" (California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,176, issued on May 19, was assigned to Siliconix Inc. (San Jose, Calif.).

"Termination structure" was invented by Ayman Shibib (San Jose, Calif.) and Jun Hu (Belmont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal oxide semiconductor field effect transistor (MOSFET) device, and methods for manufacturing and using the same. In some implementations, the MOSFET device includes a plurality of gate structures which are parallel to each other and separated from each other, and a termination structure having a first edge adjacent to the plurality of gate structures and a second edge on a side of the termination structure opposite the first ed...