US Patent Issued to FUJI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,178, issued on May 19, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Tomohiro Moriya (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an intermediate region between an active region and an edge termination region, on a front surface of a semiconductor substrate, a gate polysilicon wiring layer is provided via an insulating layer in which a gate insulating film and a field oxide film are stacked sequentially. An inner peripheral end of the field oxide film is positioned directly beneath the gate polysilicon wiring layer, which extends inward from the field oxide...