ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,811, issued on Nov. 3, was assigned to Amkor Technology Singapore Holding Pte. Ltd. (Singapore). "Electronic devices and methods of manufact... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,812, issued on Nov. 3, was assigned to Adeia Semiconductor Bonding Technologies Inc. (San Jose, Calif.). "Bonded structure with interconnect... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,813, issued on Nov. 3, was assigned to Volantis Semiconductor Inc. (Portland, Ore.). "Back side power delivery for wafer-scale integration w... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,814, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Packaging architecture with edge ring anchoring" was invented by ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,815, issued on Nov. 3, was assigned to TANAKA PRECIOUS METAL TECHNOLOGIES Co. Ltd. (Tokyo). "Interposer substrate and method for producing d... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,817, issued on Nov. 3, was assigned to Lux Semiconductors Inc. (Albany, N.Y.). "Metal core substrate based package interconnect systems" was... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,818, issued on Nov. 3, was assigned to X-Celeprint Ltd. (Dublin). "Printed devices in cavities" was invented by Antonio Jose Marques Trindad... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,819, issued on Nov. 3, was assigned to QUALCOMM Inc. (San Diego). "Package substrate comprising embedded integrated device" was invented by ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,820, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package" was invented by Keunho ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,821, issued on Nov. 3, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China). "High-symmetrical semiconductor arrangement" was inve... Read More