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US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device structure with energy removable structure and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,752, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with energy removab... Read More


US Patent Issued to Nexperia Technology (Shanghai), NEXPERIA on Nov. 3 for "Semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,753, issued on Nov. 3, was assigned to Nexperia Technology (Shanghai) Ltd. (Shanghai) and NEXPERIA B.V. (Nijmegen, Netherlands). "Semiconduc... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,754, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Jun Sung... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor devices having connecting conductive lines" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,755, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices having connecting conduc... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory devices including slot structures" (Idaho Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,756, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory devices including slot structures" was invented by Ada... Read More


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device having at least one air gap and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,757, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device having at least one air gap a... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device having low dielectric capacitance, and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,758, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device having low d... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device having a reinforcing insulating layer corresponding to a via" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,759, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a reinforcing insu... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor devices with electrical fuses and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,760, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor devices with electrical... Read More


US Patent Issued to STMICROELECTRONICS on Nov. 3 for "SiC-based electronic device with fuse element for short-circuits protection, and manufacturing method thereof" (Italian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,761, issued on Nov. 3, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "SiC-based electronic device with fuse element for... Read More