ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,758, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device having low dielectric capacitance, and method for manufacturing the same" was invented by Ting-Ya Lo (Hsinchu, Taiwan), Gary Liu (Hsinchu, Taiwan), Chi-Lin Teng (Hsinchu, Taiwan), Zi-Yi Yang (Hsinchu, Taiwan), Chuan-Pu Chou (Hsinchu, Taiwan), Hsin-Yen Huang (Hsinchu, Taiwan), Chia-Tien Wu (Hsinchu, Taiwan), Hsiao-Kang Chang (Hsinchu, Taiwan), Shao-Kuan Lee (Hsinchu, Taiwan) and Chia-Chen Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a c...