US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device having at least one air gap and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,757, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device having at least one air gap and method for manufacturing the same" was invented by Yuan-Yuan Lin (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes an upper metal line and a lower metal line. The upper metal line is disposed over the lower metal line. At least one air gap is disposed between the upper metal line and the lower metal line."

The patent was filed on Dec. 27, 2023, under Application ...