ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,356, issued on Nov. 3, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor and display device" was invented by Y... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,358, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Embedded jumper connection" was invented by Re... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,360, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure with treated ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,361, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Integration of different gate dielectrics nano... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,362, issued on Nov. 3, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device and metho... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,363, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Wall coupled with two stacks of nanoribbons to electrical isolate... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,364, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabrica... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,365, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego). "Gate-all-around (GAA) nanosheet device having inner gate spacer w... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,366, issued on Nov. 3, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea). "Non-volatile semiconductor memory device and manufact... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,367, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Ferroelectric field effect transi... Read More