ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,364, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Ki Joon Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, a first bridge pattern spaced apart from the substrate and extending in a first direction and including a two-dimensional chalcogenide in which a semiconductor element and a chalcogen element are combined, a gate structure extending in a second direction intersecting the first direction and through which the first bridge pattern penetrates, a gate spacer ex...