US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor structure with treated gate dielectric layer and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,360, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with treated gate dielectric layer and method for manufacturing the same" was invented by Chi Huang (Changhua County, Taiwan), Che-Chia Hsu (Taoyuan City, Taiwan), Chih-Pin Tsao (Zhubei City, Taiwan) and Chih-Hong Hwang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a first channel structure and a second channel structure and forming a first type of source/drain structures attached to opposite sid...