US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Ferroelectric field effect transistor and methods of forming the same" (Belgian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,367, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric field effect transistor and methods of forming the same" was invented by Gerben Doornbos (Kessel-Lo, Belgium), Oreste Madia (Leuven, Belgium), Georgios Vellianitis (Heverlee, Belgium) and Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and methods of forming the same are described. The device includes a substrate, source/drain regions disposed over the substrate, a ferroelectric layer disposed over the substrate, a gate electrode in contact with the ferroelectric layer, a fi...