ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,322, issued on Nov. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Vertical heterojunction bipolar transistor" was invented by... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,323, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Multiple fin device configured to operate as individual trans... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,324, issued on Nov. 3, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo). "Semiconductor element, sem... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,325, issued on Nov. 3, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and method for manufacturing the same" was i... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,326, issued on Nov. 3, was assigned to GREE ELECTRIC APPLICANCES INC. OF ZHUHAI (Zhuhai, China) and EDGELESS SEMICONDUCTOR Co. LTD. OF ZHUHAI... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,327, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device structure and me... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,328, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "High electron mobility transistor and method ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,329, issued on Nov. 3, was assigned to University of Delaware (Newark, Del.). "Semiconductor device and fabrication methods thereof" was inv... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,330, issued on Nov. 3, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan). "High electron mobility transistor a... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,331, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MNUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor device with a source/dra... Read More