US Patent Issued to Mitsubishi Electric on Nov. 3 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,325, issued on Nov. 3, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Koichi Nishi (Tokyo), Shinya Soneda (Tokyo), Akihiko Furukawa (Tokyo) and Katsumi Nakamura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Hysteresis of gate leakage is reduced in a semiconductor device with a structure including embedded electrodes below gate trench electrodes. A semiconductor device includes an active trench gate formed in a trench coming in contact with an emitter layer, a base layer, and a carrier storage layer to reach a drift layer. The active trench gate includes: a gate t...