US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,327, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Hong-Chih Chen (Changhua County, Taiwan), Fu-Hsiang Su (Zhubei City, Taiwan), Chia-Hao Kuo (Taoyuan City, Taiwan), Wen-Li Chiu (Kaohsiung City, Taiwan), Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan) and Shih-Hsun Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. ...