US Patent Issued to UNITED MICROELECTRONICS on Nov. 3 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,328, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Chun-Ming Chang (Kaohsiung City, Taiwan), Che-Hung Huang (Hsinchu City, Taiwan), Wen-Jung Liao (Hsinchu City, Taiwan) and Chun-Liang Hou (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a p-type semiconductor layer on the buffer layer, a gate electrode on the p-type semiconductor layer, a source electrode and a drain electrode adjac...