US Patent Issued to Intel on Aug. 11 for "Conductive via structures for gate contact or trench contact" (Oregon Inventors)

Posted On: 2026-08-12

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,948, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.). "Conductive via structures for gate contact or trench contact" w... Read More

US Patent Issued to Kioxia on Aug. 11 for "Memory device" (Japanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,949, issued on Aug. 11, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Natsuki Fukuda (Yokkaichi, Japan) and Tadashi... Read More

US Patent Issued to Micron Technology on Aug. 11 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,950, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory circuitry and method used in forming memory circuitr... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device including pad sacrifice films and electronic system including the same" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,951, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device including pad sa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" (New York, Virginia Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,952, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including BSPDN structu... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" (New York Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,953, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including self-aligned ... Read More

US Patent Issued to STMICROELECTRONICS INTERNATIONAL on Aug. 11 for "Semiconductor device and method of forming the same" (French Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,954, issued on Aug. 11, was assigned to STMICROELECTRONICS INTERNATIONAL N.V. (Geneva). "Semiconductor device and method of forming the sam... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Through-substrate-via cell" (Taiwanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,955, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Through-substrate-via cell" was... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Memory device having backside power vias" (Taiwanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,956, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory device having backside p... Read More

US Patent Issued to Infineon Technologies on Aug. 11 for "Silicon carbide device and method for forming a silicon carbide device" (German, Austrian Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,957, issued on Aug. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Silicon carbide device and method for forming a sil... Read More

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US Patent Issued to Intel on Aug. 11 for "Conductive via structures for gate contact or trench contact" (Oregon Inventors)

US Patent Issued to Kioxia on Aug. 11 for "Memory device" (Japanese Inventors)

US Patent Issued to Micron Technology on Aug. 11 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device including pad sacrifice films and electronic system including the same" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" (New York, Virginia Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" (New York Inventors)

US Patent Issued to STMICROELECTRONICS INTERNATIONAL on Aug. 11 for "Semiconductor device and method of forming the same" (French Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Through-substrate-via cell" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Memory device having backside power vias" (Taiwanese Inventors)

US Patent Issued to Infineon Technologies on Aug. 11 for "Silicon carbide device and method for forming a silicon carbide device" (German, Austrian Inventors)