US Patent Issued to Infineon Technologies on Aug. 11 for "Silicon carbide device and method for forming a silicon carbide device" (German, Austrian Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,957, issued on Aug. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Silicon carbide device and method for forming a silicon carbide device" was invented by Edward Furgut (Dasing, Germany), Ravi Keshav Joshi (Klagenfurt am Worthersee, Austria), Thomas Basler (Chemnitz, Germany), Martin Gruber (Schwandorf, Germany), Jochen Hilsenbeck (Villach, Austria) and Wolfgang Scholz (Olching, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium ...