US Patent Issued to STMICROELECTRONICS INTERNATIONAL on Aug. 11 for "Semiconductor device and method of forming the same" (French Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,954, issued on Aug. 11, was assigned to STMICROELECTRONICS INTERNATIONAL N.V. (Geneva).

"Semiconductor device and method of forming the same" was invented by Pascal Fornara (Pourrieres, France), Antonin Chollet (Aix-en-Provence, France) and Julien Amouroux (Aix en Provence, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes depositing a first protective layer over a first conductive feature and a second conductive feature. The first protective layer covers respective sidewalls and top surfaces of the first conductive feature and the second conductive feature. A portion of the first protec...