US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" (New York Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,953, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" was invented by Myung Yang (Niskayuna, N.Y.), Wonhyuk Hong (Clifton Park, N.Y.), Myunghoon Jung (Clifton Park, N.Y.), Jongjin Lee (Clifton Park, N.Y.), Jaejik Baek (Watervliet, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: at least one transistor comprising source/drain regions and 1st gate structure; a contact isolation layer below the 1st gate structure; and a backside conta...