ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,702, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and fabricating method... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,703, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device" was invented b... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,704, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and fabricating method... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,705, issued on June 23, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Trench gate NMOS transistor and trench gate P... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,706, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Su You... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,707, issued on June 23, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China). "Method for fabricating semiconductor devic... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,708, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device" was invented b... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,709, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method" wa... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,710, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea). "Vertical PN connection in multi-stack semiconductor de... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,711, issued on June 23, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Stacked hybrid TFET and MOSFET" was invented... Read More