US Patent Issued to United Semiconductor (Xiamen) on June 23 for "Method for fabricating semiconductor device using patterned mask for forming hard masks on gate structures" (Chinese, Singaporean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,707, issued on June 23, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Method for fabricating semiconductor device using patterned mask for forming hard masks on gate structures" was invented by Wen Wei Wang (Shamen City, China), Xiang Xiang Zhou (Shamen City, China), Xiang Wang (Shamen City, China), Hailong Gu (Singapore) and Wen Yi Tan (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first transistor region and a second transistor region and then forming a first gate structure on the first transistor reg...