US Patent Issued to UNITED MICROELECTRONICS on June 23 for "Semiconductor device and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,702, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and fabricating method of the same" was invented by Hsin-Hsien Chen (New Taipei City, Taiwan), Sheng-Yuan Hsueh (Tainan City, Taiwan), Kun-Szu Tseng (Tainan City, Taiwan), Kuo-Hsing Lee (Hsinchu County, Taiwan) and Chih-Kai Kang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate. A high voltage transistor is disposed within a high voltage region of the substrate. The high voltage transistor includes a first gate dielectric layer disposed on the substrate. A first gate electr...