ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,703, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Gunho Jo (Suwon-si, South Korea), Heesub Kim (Suwon-si, South Korea), Seung Hyun Lim (Suwon-si, South Korea), Bomi Kim (Suwon-si, South Korea) and Eunho Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a fin-type active region including a first fin portion and a second fin portion apart from each other in a first lateral direction with a contact space therebetween, a first source/drain region on the fin-type active region at a position overlapping t...