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US Patent Issued to STMicroelectronics International on July 21 for "Method of operating phase change memories, corresponding device and computer program product" (Italian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,886, issued on July 21, was assigned to STMicroelectronics International N.V. (Geneva). "Method of operating phase change memories, corresp... Read More


US Patent Issued to STMicroelectronics International on July 21 for "Programming for non-volatile memory" (Italian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,887, issued on July 21, was assigned to STMicroelectronics International N.V. (Geneva). "Programming for non-volatile memory" was invented ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Nonvolatile memory device, operating method of nonvolatile memory device, and memory system including nonvolatile memory device" (South Korean Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,888, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Nonvolatile memory device, operating method ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Semiconductor device with alternating bitlines and string select lines and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,889, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device with alternating bitlin... Read More


US Patent Issued to Micron Technology on July 21 for "Program verify level adjustment for program operation in a memory device" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,890, issued on July 21, was assigned to Micron Technology Inc. (Boise, Idaho). "Program verify level adjustment for program operation in a ... Read More


US Patent Issued to Micron Technology on July 21 for "Sensing time adjustment for program operation in a memory device" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,891, issued on July 21, was assigned to Micron Technology Inc. (Boise, Idaho). "Sensing time adjustment for program operation in a memory d... Read More


US Patent Issued to Winbond Electronics on July 21 for "Method of optimizing erasure and programming pass voltage" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,892, issued on July 21, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Method of optimizing erasure and programming pa... Read More


US Patent Issued to Beijing PXMicro Technology on July 21 for "Flash memory cell, writing method and erasing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,893, issued on July 21, was assigned to Beijing PXMicro Technology Co. Ltd. (Beijing). "Flash memory cell, writing method and erasing metho... Read More


US Patent Issued to Sandisk Technologies on July 21 for "Reducing interference methods for 3D multiple-channel memory devices" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,894, issued on July 21, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Reducing interference methods for 3D multiple-channe... Read More


US Patent Issued to Kioxia on July 21 for "Semiconductor memory device, memory system, and control method" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,895, issued on July 21, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device, memory system, and control method" was invented... Read More