US Patent Issued to Beijing PXMicro Technology on July 21 for "Flash memory cell, writing method and erasing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,893, issued on July 21, was assigned to Beijing PXMicro Technology Co. Ltd. (Beijing).

"Flash memory cell, writing method and erasing method therefor" was invented by Jiayong Jiang (Beijing) and Zhendong Shi (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a flash memory cell and associated manufacturing, writing, and erasing methods. The flash memory cell comprises a substrate with a deep well region and a well region on which a first and second storage transistor are provided to store separate data and a gating transistor provided horizontally between them to perform a gating operation. The three transistors are connected in se...